Effect on Silicon Nitride thin Films Properties at Various Powers of RF Magnetron Sputtering
Keywords:AFM, FE-SEM, FTIR, R.F, Silicon Nitride, Sputtering Technique, Surface Profiler, Thin Films, XRD
Silicon nitride thin films have numerous applications in microelectronics and optoelectronics fields due to their unique properties. In this work, silicon nitride thin films were produced using radio frequency (R.F.) magnetron sputtering technique at various sputtering powers. The prepared thin films were characterized with XRD, FE-SEM, FTIR, surface profiler, AFM and spectral reflectance techniques for structure, surface morphology, chemical bonding information, growth rate, surface roughness and optical properties. The results showed that silicon nitride thin films were amorphous in nature. The films were smooth and densely packed with no voids or cracks at the surface. FTIR characterization informed about Si-N bonding existence which confirmed the formation of silicon nitride films. The sputtering power showed the impetus effect on growth rate, surface roughness and optical properties of produced films.
 Ulvestad A, Andersen HF, MÃ¦hlen JP, Prytz Ã˜ & Kirkengen M (2017), Long-term cyclability of substoichiometric silicon nitride thin film anodes for Li-ion batteries. Scientific reports 7(1), 13315.
 Dergez D, Schneider M, Bittner A & Schmid U (2015), Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films. Thin Solid Films 589, 227-232.
 Torchynska T, Khomenkova L & Slaoui A (2018), Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy. Journal of Electronic Materials 47(7), 3927-3933.
 Knoops HC, Braeken EM, de Peuter K, Potts SE, Haukka S, Pore V, & Kessels WM (2015), Atomic layer deposition of silicon nitride from Bis (tert-butylamino) silane and N2 plasma. ACS applied materials & interfaces 7(35), 19857-19862.
 Ishii Y, Kaneko T, Okimura K, Shindo H & Isomura M (2017), Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma. Thin Solid Films 624, 49-53.
 Yota J, Hander J & Saleh AA (2000), A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18(2), 372-376.
 Mustafa MK, Iqbal Y, Majeed U & Sahdan MZ (2017, January), Effect of precursorâ€™s concentration on structure and morphology of ZnO nanorods synthesized through hydrothermal method on gold surface. In AIP Conference Proceedings 1788(1), 030120.
 Alnoor H, Pozina G, Khranovskyy V, Liu X, Iandolo D, Willander M & Nur O (2016), Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes. Journal of Applied Physics 119(16), 165702.
 Majid A & Bibi M (2018), Wet Chemical Synthesis Methods. In Cadmium based II-VI Semiconducting Nanomaterials, (pp. 43-101). Springer, Cham.
 Argile C & Rhead GE (1989), Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy. Surface Science Reports 10(6-7), 277-356.