Design of CSDG MOSFET based low noise amplifier for GHZ range

  • Abstract
  • Keywords
  • References
  • PDF
  • Abstract

    In this paper we have presented a Cylindrical Surrounding Double-Gate (CSDG) MOSFET based Low Noise Amplifier (LNA) that operates at frequencies from 1 GHz to 10 GHz. The designed CSDG based LNA is combination of conventional LNA with CSDG MOSFET for low noise figure at high frequencies. The CSDG MOSFET comprises of both the main and active feedback transistor. The highest gain achieved is -16 dB at 2.4 GHz. The stability factor K greater than 1 and the achieved lowest noise figure is 0.2 dB at 10 GHz. The proposed designed LNA provides the lowest noise figure at the highest frequencies compared to other conventional LNAs.

  • References

      [1] Bill Smith, Electronic amplifiers and circuit design, Wexford College Press, Sept. 2009.

      [2] Roberto Diaz Ortega and Sunil Lalcand Khemchandani, Design of Low-Noise Amplifiers for Ultra-Wideband Communications, McGraw-Hill Education, USA, Jan. 2014.

      [3] Akanksha Sahu, Paresh C. Sau, and Dheeraj Kalra, “Design of low power UWB LNA for frequency 3.1–5 GHz in 0.18 μm CMOS technology,” Int. Conf. on Computing, Communication and Automation (ICCCA), Noida, India, 15-16 May 2015, pp.198-201.

      [4] Fedrerico Bruccoleri, Eric A. M. Klumperink, and Bram Nauta, Wideband low noise amplifiers exploiting thermal noise cancellation, Springer, USA, 2005.

      [5] Frank Gross, Smart antennas for wireless communications, with MATLAB, 1st Ed., McGraw-Hill, Sept. 2005.

      [6] Constantine A. Balanis, Modern Antenna Handbook, John Wiley & Sons, USA, Sept. 2008.

      [7] Thomas H. Lee, The design of CMOS radio frequency integrated circuits, 2nd Ed., Cambridge University Press, Cambridge, UK, 2004.

      [8] Ramkrishna Kundu, Abhishek Pandey, Subhra Chakraborty, and Vijay Nath, “A CMOS low noise amplifier based on common source technique for ISM band application,” Microsystem Technology, vol. 22, no. 11, pp 2707–2714, Nov. 2016.

      [9] Louis J. Ippolito, Satellite communication systems engineering: atmospheric effects, satellite link design and system performance, pp. Wiley, 2nd Ed., May 2017.

      [10] Himanshu Bhasin, Sandeep Kumar, Santanu Dwari, Mitul Handa, and Binod K. Kanaujia, “Optimization of noise figure and gain of a CMOS RF low noise amplifier” 9th Int. Conf. on Industrial and Information Systems (ICIIS), Gwalior, India, 15-17 Dec. 2014, pp. 1-4.

      [11] Namrata Yadav, Abhishek Pandey, and Vijay Nath, “Design of CMOS low noise amplifier for 1.57GHz,” Int. Conf. on Microelectronics, Computing and Communications (MicroCom), Durgapur, India, 23-35 Jan. 2016, pp. 1-5. 10.1109/MicroCom.2016.7522438

      [12] Abhay P. Kulkarni and S. Ananthakrishnan, “1 to 3 GHz wideband low noise amplifier design,” 5th Int. Conf. on Computers and Devices for Communication (CODEC), Kolkata, India, 17-19 Dec. 2012, pp. 1-4. 10.1109/CODEC.2012.6509335

      [13] Dale D. Henkes, “LNA design uses series feedback to achieve simultaneous low input VSWR and low noise,” Applied Microwave & Wireless, pp. 26-32, October 1998.

      [14] Vladimir Aparin and Lawrence E. Larson, “Modified derivative superposition method for linearizing FET low noise amplifiers,” IEEE Trans. of Microwave Theory and Techniques, vol. 53, no. 2, pp. 571-581, Feb. 2005.

      [15] L. Ma, Z. G. Wang, and J. Xu, “A high linearity wideband common gate LNA with differential active inductor,” IEEE Trans. Circuits Syst. II, Express Briefs, vol. 64, no. 4, pp. 402-406, April 2017.

      [16] Farooq A. Khaleel and Mohammed N. Abbas, “Tunable linearity enhancement for 180 nm complementary metal–oxide–semiconductor LNA with active feedback” The Journal of Engineering, vol. 2017, no. 7, pp. 312-317, July 2017.

      [17] Viranjay M. Srivastava, K. S. Yadav, and G. Singh, “Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch,” Microelectronics Journal, vol. 42, no. 10, pp. 1124-1135, Oct. 2011.

      [18] Viranjay M. Srivastava, K. S. Yadav, and G. Singh, “Analysis of double gate CMOS for double-pole four-throw RF switch design at 45-nm technology,” J. of Computational Electronics, vol. 10, no. 1-2, pp. 229-240, June 2011.

      [19] Viranjay M. Srivastava and G. Singh MOSFET Technologies for Double-Pole 4 Throw Radio Frequency Switch, Springer International Publishing, Switzerland, Oct. 2013.

      [20] Tao Chuan Lim and G. Alastair Armstrong, “Scaling issues for analogue circuits using Double Gate SOI transistors,” Solid-State Electronics, vol. 51, no. 2, pp. 320-327, Feb. 2007.

      [21] S. Kang and Yusuf Leblebichi, CMOS Digital Integrated Circuits Analysis & Design, 3rd Ed., McGraw-Hill, New York, USA, 2002.

      [22] Gabriele Manganaro and Domine Lenaerts, Advances in analogue and RF IC design for wireless communication systems, Elsevier, 1st Ed., May 2013.

      [23] Robert Sobot, Wireless communication electronics: Introduction to RF circuits and design techniques, Springer-Verlag, New York, 2012.

      [24] Dave Adamy, Practical Communication Theory (Electromagnetics and Radar), 2nd Ed., SciTech Publishing, Aug. 2014.

      [25] Fraidoon Mazda, Telecommunications engineer’s reference Book, Butterworth Heineman, 1993.

      [26] Art Kay, Operational amplifier noise: Techniques and tips for analyzing and reducing noise, Elsevier, 1st Ed., Jan. 2012.

      [27] Ian A. Glover, Steve Pennock, and Peter Shepherd, Microwave devices, circuits and subsystems for communications engineering, Wiley, May 2005.

      [28] Andrei Grebennikov, RF and microwave power amplifier design, McGraw Hill, USA, 2005.

      Guillermo Gonzalez, Microwave transistor amplifiers – analysis and design, 2nd Ed., Prentice Hall, New Jersey, USA, 1996




Article ID: 21506
DOI: 10.14419/ijet.v7i4.21506

Copyright © 2012-2015 Science Publishing Corporation Inc. All rights reserved.