A Study on Electrical Characterization of Surface Potential and Threshold Voltage for Nano Scale FDSOI MOSFET

Authors

  • Chandra Shakher Tyagi
  • R L. Sharma
  • Prashant Mani

DOI:

https://doi.org/10.14419/ijet.v7i3.12.16031

Published:

2018-07-20

Keywords:

Nano scale, Short-channel effects, silicon- on-insulator (SOI), channel length, 3-D, surface potential, MOSFET, Threshold voltage.

Abstract

In this paper the study of electrical characterization of Surface potential & Vth threshold-voltage model is developed for FD SOI MOSFET. The threshold voltage is important parameter in device design. Scaling of device has positive impact on device performance. The various parameters like thickness of silicon film, oxide layer, drain to source voltage plays a key role in improvement of device performance. Surface potential explain the distribution of applied potential throughout the channel. We also analyzed the effect of threshold voltage with various electrical parameters.

 

 

 

References

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[9] Prashant Mani and M.K.Pandey, “Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equationâ€, Journal of Nano- and Electronic Physics vol.7, 2015.

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How to Cite

Shakher Tyagi, C., L. Sharma, R., & Mani, P. (2018). A Study on Electrical Characterization of Surface Potential and Threshold Voltage for Nano Scale FDSOI MOSFET. International Journal of Engineering & Technology, 7(3.12), 232–234. https://doi.org/10.14419/ijet.v7i3.12.16031

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Received 2018-07-22
Accepted 2018-07-22
Published 2018-07-20