Semi-empirical prediction of physical properties of (B3) TlP compound

  • Abstract
  • Keywords
  • References
  • PDF
  • Abstract

    The principal goal of this work is the prediction only by means of some emperical formulas and two other physical quantities (the bond length and the bulk modulus calculated initially from first-principle calculations) of the refractive index, the exciton Bohr parameter, the electronic polarizability, the plasmon energy, the force constants, the optical band gap energy, the homopolar and heteropolar energies, the bonding-antibonding energy gap, the ionicity, the dielectric constant, and the optical susceptibility of (B3) thallium phosphide (TlP) compound. In addition, the Debye temperature, the melting temperature, the thermal conductivity and finally the linear thermal expansion of this compound are also obtained. Our results are in general in good agreement with the previous results of the literature.

    Keywords: Optical Properties, Thermal Properties, TlP Compound.

  • References

    1. R. R. Reddy, Y. Nazeer Ahammed, P. Abdul Azeem, K. Rama Gopal, B. Sasikala Devi & T. V. R. Rao, "Dependence of Physical Parameters of Compound Semiconductors on Refractive Index", Defense Science Journal, Vol. 53, No. 3, (2003), pp. 239-248.
    2. Y. O. Ciftci, K. Colakoglu & E. Deligz, "A First Principles Studies on TlX (X=P, As)", Central European Journal of Physics, Vol. 6, No. 4, (2008), pp. 802-807.
    3. N. Saidi-Houat, A. Zaoui & M. Ferhat, "Structural stability of thallium-V compounds", Journal of Physics: Condensed Matter, Vol. 19, No. 10, (2007), pp. 106221 (18pp).
    4. L. Shi, Y. Duan & L. Qin, "Structural phase transition, electronic and elastic properties in TlX (X = N, P, As) compounds: Pressure-induced effects", Computational Materials Science, Vol.50, (2010), pp. 203-210.
    5. S. Daoud, N. Bioud, N. Lebgaa & R. Mezouar "Optoelectronic and thermal properties of boron- bismuth compound", International Journal of Physical Research", Vol. 2, No. 2, (2014), pp. 27-31. DOI:10.14419/ijpr.v2i2.2760.
    6. S. Daoud & N. Bioud "Structural properties of (B3) TlP under pressure", International Journal of Physical Research", Vol. 2, No. 2, (2014), pp. 50-55. DOI: 10.14419/ijpr.v2i2.3100.
    7. N. Korti-baghdadli, A. E. Merad & T. Benouaz, "Adjusted Adashis Model of Exciton Bohr Parameter and New Proposed Models for Optical Properties of III-V Semiconductors", American Journal of Materials Science and Technology, Vol.3, (2013), pp. 65-73. DOI:10.7726/ajmst.2013.1008.
    8. A. S. Verma, "Electronic and Optical Properties of Rare-earth Chalcogenides and Pnictides", African Physical Review, Vol.3, (2009), pp. 11-20.
    9. A. S. Verma, R. K. Singh & S. K. Rathi, "An empirical model for dielectric constant and electronic polarizability of binary (A N B 8? N ) and ternary (A N B 2+ N C 2 7? N ) tetrahedral semiconductors", Journal of Alloys and Compounds, Vol. 486, No. 1-2, (2009), pp. 795-800. DOI:10.1016/j.jallcom.2009.07.067.
    10. V. Kumar, A. K. Shrivastava, Anita Sinha & Vijeta Jha, "Dielectric properties of different materials", Indian Journal of Pure and Applied Physics, Vol. 51, No. 1, (2013), pp. 49-54. .
    11. A. S. Verma, "Bond-stretching and bond-bending force constant of binary tetrahedral (AIIIBV and AIIBVI) semiconductors", Physics Letters A, Vol. 372, (2008), pp. 7196 -7198. DOI:10.1016/j.physleta.2008.10.043.
    12. M. Anani, C. Mathieu, S. Lebid, Y. Amar, Z. Chama & H. Abid, "Model for calculating the refractive index of a III-V semiconductor", Computational Materials Science, Vol.41, No.4, (2008), pp. 570-575.
    13. S. Q. Wang & H. Q. Yet, "Plane-wave pseudopotential study on mechanical and electronic properties for IVand III-V crystalline phases with zinc-blende structure", Physical Review B, Vol.66, (2002), pp. 235111 (7pp).
    14. D. S. Yadav, C. kumar, J. Sigh, Parashuram & G. Kumar, "Optoelectronic properties of zinc blende and wurtzite structured binary solids", Journal of Engineering and Computer Innovations, Vol. 3, No. 2, (2012), pp. 26-35.
    15. V. Kumar, V. Jha, & A. K. Shrivastava, "Debye temperature and melting point of II-VI and III-V semiconductors", Crystal Research and Technology, Vol. 45, No. 9, (2010) pp. 920-924. http://www.
    16. S. Singh & M. Sarwan, "High pressure phase transition and elastic behavior of TlX (X=N, P, As) semiconductors", Journal of Physics and Chemistry of Solids, Vol.74, (2013), pp. 487-495.
    17. S. Adachi, "Properties of Group-IV, III-V and II-VI Semiconductors", John Wiley & Sons, England, (2005).
    18. A. S. Verma, B. K. Sarkar & V. K. Jindal, "Inherent properties of binary tetrahedral semiconductors", Physica B, Vol. 405, (2010), pp. 1737 - 1739. DOI:10.1016/j.physb.2010.01.029.
    19. H. Neumann, "Trends in the thermal expansion coefficients of the AIBIIIC2VI and AIIBIVC2V chalcopyrite compounds", Kristall und Technik, Vol. 15, No. 7, (1980), pp.849-857. DOI: 10.1002/crat.19800150718.




Article ID: 3361
DOI: 10.14419/ijpr.v2i2.3361

Copyright © 2012-2015 Science Publishing Corporation Inc. All rights reserved.