Porous TiO2 Thin Film for Egfet pH Sensing Application

  • Authors

    • M. A. Zulkefle
    • R. A. Rahman
    • M. Rusop
    • W. F. H. Abdullah
    • S. H. Herman
    https://doi.org/10.14419/ijet.v7i4.42.25690

    Received date: January 11, 2019

    Accepted date: January 11, 2019

    Published date: December 29, 2018

  • EGFET, etching, pH sensor, porous, titanium dioxide

  • Abstract

    Porous TiO2 thin film with nanostructure networks were produced through post-deposition etching-immersion method. TiO2 thin film was first fabricated using sol-gel spin coating and immersed in 5 M NaOH solution to obtain the porous structure. The nanostructure network exhibit branches with the size ranging from 9.01 nm to 11.39 nm while the distance between the branches varied between 16.64 nm to 83.04 nm. From the atomic force microscopy image, the surface roughness of the porous film was 5.049 nm, as expected, higher than the un-etched TiO2 sample. The porous film was then applied as the sensing membrane for an extended-gate field effect transistor (EGFET) pH sensor. The pH sensitivity of the porous film was 19.30 mV/pH with linearity of 0.9550, indicating that the porous film also has the ability as the sensing membrane of an EGFET pH sensor.

  • References

    1. Bergveld P. Development, operation, and application of the ion-sensitive field-effect transistor as a tool for electrophysiology,” IEEE Transactions on Biomedical Engineering, 1972, 5, 342–351
    2. Hashim U, Chong S.W, and Liu W.-W. Fabrication of Silicon Ni-tride Ion Sensitive Field-Effect Transistor for pH Measurement and DNA Immobilization/Hybridization. J. Nanomater., 2013, 1–9
    3. Jimenez-Jorquera C, Orozco J, and Baldi A. ISFET based microsen-sors for environmental monitoring. Sensors, 2010, 10(1), 61–83
    4. Zorrilla L.A.V, and Calvo J.G.L. Monitoring system for ISFET and glass electrode behavior comparison. Proc. 2017 IEEE 24th Int. Congr. Electron. Electr. Eng. Comput. INTERCON, 2017.
    5. van der Spiegel J, Lauks I, Chan P, and Babic D. The extended gate chemically sensitive field effect transistor as multi-species micro-probe. Sensors and Actuators, 1983, 4, 291–298
    6. Wu C.L, Chou J.C, Chung W.Y, Sun T.P, and Hsiung S.K. Study on SnO2/Al/SiO2/Si ISFET with a metal light shield. Mater. Chem. Phys., 2000, 63(2), 153–156
    7. Kao C.H, Chen H, and Huang C.-Y. Effects of Ti addition and an-nealing on high-k Gd2O3 sensing membranes on polycrystalline sili-con for extended-gate field-effect transistor applications. Appl. Surf. Sci., 2013, 286, 328–333
    8. Silva G.O, and Mulato M. Urea Detection Using Commercial Field Effect Transistors. ECS Journal of Solid State Science and Tech-nology, 2018, 7(7), Q3014-Q3019
    9. Purwidyantri A, Kamajaya L, Chen C.-H, Luo Ji.-D, Chiou C.-C, Tian Y.-C, Lin C.-Y, Yang C.-M, and Lai C.-S. A Colloidal Nano-patterning and Downscaling of a Highly Periodic Au Nanoporous EGFET Biosensor. Journal of The Electrochemical Society, 2018, 165(4), H3170-H3177
    10. Yin L.-T, Chou J.-C, Chung W.-Y, Sun T.-P, and Hsiung S.-K. Study of indium tin oxide thin film for separative extended gate ISFET. Materials Chemistry and Physics, 2001, 70, 12–16
    11. Mokhtarifar N, Goldschmidtböing F, and Woias P. Development of an Extended Gate Field Effect Transistor (EGFET) based low-cost pH-sensor. MikroSystemTechnik Kongress, 2017, 634–637
    12. Sasipongpana S, Rayanasukha Y, Prichanont S, Thanachayanont C, Porntheeraphat S, and Houngkamhang N. Extended-gate field ef-fect transistor (EGFET) for carbaryl pesticide detection based on enzyme inhibition assay. Mater. Today Proc., 2017 4(5), 6458–6465
    13. Sabah F.A, Ahmed N.M, Hassan Z, and Almessiere M.A. Influence of CuS membrane annealing time on the sensitivity of EGFET pH sensor. Mater. Sci. Semicond. Process., 2017, 71, 217–225
    14. Rasheed H.S, Ahmed N.M, and Matjafri M.Z. Ag metal mid layer based on new sensing multilayers structure extended gate field ef-fect transistor (EG-FET) for pH sensor. Mater. Sci. Semicond. Pro-cess., 2018, 74, 51–56
    15. Ali G.M. Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode. J. Electron. Mater., 2017, 46(2), 713–717
    16. Ahmed N.M, Kabaa E.A, Jaafar M.S, and Omar A.F. Characteris-tics of Extended-Gate Field-Effect Transistor (EGFET) Based on Porous n-Type (111) Silicon for Use in pH Sensors. J. Electron. Ma-ter., 2017, 46(10), 5804–5813
    17. Kumar R, A-Dossary O, Kumar G, and Umar A. Zinc Oxide Nanostructures for NO2 Gas-Sensor Applications: A Review. Nano-Micro Lett., 2015, 7(2), 97-120
    18. Li H.-H, Dai W.-S, Chou J.-C, and Cheng H.-C. An Extended-Gate Field-Effect Transistor With Low-Temperature Hydrothermally Synthesized SnO2 Nanorods as pH Sensor. IEEE ELECTRON DEVICE LETTERS, 2012, 33(10), 1495–1497
    19. Balducci G, Diaz L.B, and Gregory D.H. Recent progress in the synthesis of nanostructured magnesium hydroxide. CrystEngComm, 2017, 19(41), 6067–6084
    20. Perumal V, Hashim U, Gopinath S.C.B, Prasad H.R, Wei-Wen L, Balakrishnan S.R, Vijayakumar T, and Rahim R.A. Characterization of gold-sputtered zinc oxide nanorods—A potential hybrid material. Nanoscale Res. Lett., 2016, 11(1), 31
    21. Hotovy I, Kostic I, Nemec P, Predanocy M, and Rehacek V. Pat-terning of titanium oxide nanostructures by electron-beam lithogra-phy combined with plasma etching. J. Micromechanics Microengi-neering, 2015, 25(7), 74006
    22. Rose J, Auffan M, Proux O, Niviere V, and Bottero J.Y. Growth of 1-D Oxide Nanostructures. Encycl. Nanotechnol., 2012, 1–17
    23. Abdullah W.F.H, Othman M, and Ali M.A.M. Chemical field-effect transistor with constant-voltage constant-current drain-source readout circuit. 2009 IEEE Student Conference on Research and Development (SCOReD), 2009.
    24. Sim S, Tan Y.Y, Lai M.A, Tso C.P, and Lim W.K. Reducing scan-ning electron microscope charging by using exponential contrast stretching technique on post-processing. Journal of Microscopy, 2010, 238, 44–56
    25. Sorcar S, Razzaq A, Tian H, Grimes C.A, and In S.-I. Facile elec-trochemical synthesis of anatase nano-architectured titanium diox-ide films with reversible superhydrophilic behaviour. J. Ind. Eng. Chem., 2016, 46, 2–10
    26. Gheno S, Hasegawa H, and Filho P. Atomic force microscopy stud-ies of twins in yttrium-doped barium titanate. J. Phys. Chem. Solids, 2006 67(11), 2253–2256
    27. Nowakowski R, Luckham P, and Winlove P. Imaging erythrocytes under physiological conditions by atomic force microscopy. Bio-chimica et Biophysica, 2001, 1514, 170–176
    28. Chou J.C, and Wang Y.F. Preparation and study on the drift and hysteresis properties of the tin oxide gate ISFET by the sol–gel method. Sensors and Actuators B, 2002, 86, 58–62
    29. Batista P, and Mulato M. SnO2 extended gate field-effect transistor as pH sensor. Brazilian J. Phys., 2006, 36(2), 478–481
    30. Chiu Y.-S, Lee C.-T, Lou L.-R, Ho S.-C, and Chuang C.-T. Wide linear sensing sensors using ZnO:Ta extended-gate field-effect-transistors. Sensors Actuators B Chem., 2013, 188, 944–948

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  • How to Cite

    A. Zulkefle, M., A. Rahman, R., Rusop, M., F. H. Abdullah, W., & H. Herman, S. (2018). Porous TiO2 Thin Film for Egfet pH Sensing Application. International Journal of Engineering and Technology, 7(4.42), 112-114. https://doi.org/10.14419/ijet.v7i4.42.25690