Correlation trend between the bulk modulus, micro hardness and the lattice parameter of III-V semiconductors

  • Authors

    • Rabie Mezouar Université de Bordj Bou Arreridj
    • Nadhira Bioud Université de Bordj Bou Arreridj
    • Abdelfateh Benmakhlouf Université de Bordj Bou Arreridj
    2022-04-16
    https://doi.org/10.14419/ijac.v10i1.32020
  • III-V Semiconductors, Lattice Parameter, Bulk Modulus, Microhardness, No-Linear Correlation.
  • This work aims to investigate the correlation between the bulk modulus as well as the microhardness and the lattice parameter of several cubic zinc-blende III-V semiconductors. Our study shows that both the bulk modulus and the microhardness correlate no-linearly with the lattice parameter of III-V binary compounds. The best fits were obtained using the Gaussian model, the coefficients of the correlation were found at around 0.993 for the bulk modulus, and 0.996 for the microhardness, respectively. Our expressions perhaps used with high accurate to predict the bulk modulus and the microhardness of other binary compounds and ternary semiconductor alloys.

     

     

     

  • References

    1. [1] S. Daoud, P. K. Saini, and H. Rekab-Djabri, "Elastic constants and optical phonon frequencies of BX (X= P, As, and Sb) semiconductors: Semi-empirical prediction", International Journal of Physical Research: Vol. 8, No.2, (2020), pp. 45-49. https://doi.org/10.14419/ijpr.v8i2.31001.

      [2] A. S. Verma, B. K. Sarkar, and V. K. Jindal, "Inherent properties of binary tetrahedral semiconductors", Physica B, Vol. 405, (2010), pp. 1737-1739. https://doi.org/10.1016/j.physb.2010.01.029.

      [3] S. Daoud, "Sound velocities and thermal properties of BX (X=As, Sb) compounds", International Journal of Scientific World: Vol. 3, No.1, (2015), pp.43-48. https://doi.org/10.14419/ijsw.v3i1.4039.

      [4] S. Daoud, A. Bencheikh, and L. Belagraa, "Quasi-linear correlation between high-frequency and static dielectric constants in II-VI and III-V semiconductors ", International Journal of Physical Research, Vol. 5, No.1, (2017), pp. 4-6. https://doi.org/10.14419/ijpr.v5i1.6961.

      [5] S. Daoud and A. Latreche, "Optical properties and electronic polarizability of boron-antimonide semiconductor ", International Journal of Physical Research: Vol. 5, No.2, (2017), pp. 43-45. https://doi.org/10.14419/ijpr.v5i2.7910.

      [6] D. S. Yadav, C. kumar, J. Sigh, Parashuram, and G. Kumar, "Optoelectronic properties of zinc blende and wurtzite structured binary solids", Journal of Engineering and Computer Innovations, Vol. 3, No. 2, (2012), pp. 26-35. http://www.academicjournals.org/journal/JECI/article-abstract/DC4DD528645. https://doi.org/10.5897/JECI12.005.

      [7] S. Daoud, "Mechanical properties of BBi compound under pressure", International Journal of Scientific World, Vol.3, No.1, (2015), pp. 69-75. https://doi.org/10.14419/ijsw.v3i1.4218.

      [8] S. Daoud, "Mechanical and piezoelectric properties, sound velocity and Debye temperature of thallium-phosphide under pressure", International Journal of Advanced Research in Physical Science, Vol. 1, No. 6, (2014), pp. 1-11. www.arcjournals.org/pdfs/ijarps/v1i6/1.pdf.

      [9] M. Ueno, M. Yoshida, A. Onodera, O. Shimomura, and K. Takemura, "Stability of the wurtzite-type structure under high pressure: GaN and InN", Physical Review B, Vol. 49, (1994), pp.14-21. https://doi.org/10.1103/PhysRevB.49.14.

      [10] M. Kazan, E. Moussaed, R. Nader, and P. Masri, "Elastic constants of aluminum nitride", Physica Status Solidi C, Vol.4, (2007), pp. 204-207. https://doi.org/10.1002/pssc.200673503.

      [11] B. Xu, Q. Wang, and Y. Tian, "Bulk modulus for polar covalent crystals", Scientific Reports, Vol. 3, (2013), pp. 3068 (7 pages). https://doi.org/10.1038/srep03068.

      [12] D. Chen, and N. M. Ravindra, "Elastic properties of diamond and zincblende covalent crystals", Emerging Materials Research, Vol. 2, No.1, (2013), pp.58–63. https://doi.org/10.1680/emr.12.00034.

      [13] V. Kumar, A.K. Shrivastava, and V. Jha, "Bulk modulus and microhardness of tetrahedral semiconductors", Journal of Physics and Chemistry of Solids, Vol. 71, (2010), pp. 1513–1520. https://doi.org/10.1016/j.jpcs.2010.07.012.

      [14] S. Adachi, "Properties of group-IV, III-V and II-VI semiconductors", John Wiley & Sons Ltd, England, (2005). ISBN 0-470-09032-4. https://doi.org/10.1002/0470090340.

      [15] N. Bioud, X-W. Sun, N. Bouarissa, and S. Daoud, "Elastic constants and related properties of compressed rocksalt CuX (X = Cl, Br): Ab initio study", Zeitschrift Für Naturforschung A , Vol. 73, No. 8, (2018), pp. 767-773. https://doi.org/10.1515/zna-2018-0120.

      [16] H. Rekab-Djabri, Manal M. Abdus Salam, S. Daoud, M. Drief, Y. Guermit, and S. Louhibi-Fasla, " Ground state parameters, electronic properties and elastic constants of CaMg3: DFT study", Journal of Magnesium and Alloys, Vol. 8, No. 4, (2020), pp. 1166-1175. https://doi.org/10.1016/j.jma.2020.06.007.

      [17] A. Benamrani, S. Daoud, Manal M. Abdus Salam, and H. Rekab-Djabri, "Structural, elastic and thermodynamic properties of YRh: DFT study", Materials Today Communications, Vol.28, No. 9, (2021), pp.102529 (8 pages). https://doi.org/10.1016/j.mtcomm.2021.102529.

      [18] S. Daoud, N. Bouarissa, A. Benmakhlouf, and O. Allaoui, "Highâ€pressure effect on elastic constants and their related properties of MgCa intermetallic compound", Physica Status Solidi B, Vol. 257, No. 6, (2020), pp. 1900537 (10 pages). https://doi.org/10.1002/pssb.201900537.

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  • How to Cite

    Mezouar, R., Bioud, N., & Benmakhlouf, A. (2022). Correlation trend between the bulk modulus, micro hardness and the lattice parameter of III-V semiconductors. International Journal of Advanced Chemistry, 10(1), 9-11. https://doi.org/10.14419/ijac.v10i1.32020