KHAMIS, Mahdi All; RASHID, W. Emilin; KER, Pin Jern; LAU, K. Y. Effect of Multiplication and Absorption Layers Width on Avalanche Multiplication Gain in InGaAs/InP Avalanche Photodiode. International Journal of Engineering & Technology, [S. l.], v. 7, n. 4.35, p. 559–563, 2018. DOI: 10.14419/ijet.v7i4.35.22909. Disponível em: https://www.sciencepubco.com/index.php/ijet/article/view/22909.. Acesso em: 27 apr. 2024.