Development of the Information Storage Micromodule for Spacecrafts with LATCH-UP Effect Protection

  • Authors

    • R. S. Litvinenko
    • I. V. Prokofiev
    2018-09-27
    https://doi.org/10.14419/ijet.v7i4.7.20540
  • FPGA, latch-up effect, microassembly, radiation tolerant memory.
  • Exposure to outer space ionizing radiation places high demands on the circuits for fault tolerance. The issue of information safety on storage devices is especially acute in conditions of high radiation. Within the framework of the project on development of constructive and technological methods of creation of miniature data storage drives for onboard equipment for space purposes, the study of the radiation effects influence on the operation of memory chips and methods of counteracting these effects is carried out.

     

     

  • References

    1. [1] 3D TSV AND 2.5D BUSINESS UPDATE - MARKET AND TECHNOLOGY TRENDS 2017 Market & Technology report - May 2017. YOLE DEVELOPPEMENT

      [2] Holmes_Siedle A., Adams L. Handbook of Radiation Effects. N.Y.: Oxford university press, 1993. P. 479.

      [3] Messenger G.C., Ash M.S. Single Event Phenomena. N.Y.: Chapman&Hall, 1997. P. 368.

      [4] N.V. Kuznetsov, R.A. Nymmik, M.I. Panasyuk, E.N. Sosnovets, and M.V. Teltsov Detection and Prediction of Absorbed Radiation Doses from Solar Proton Fluxes onboard Orbital Stations // Space research. 2004. B. 42. N. 3.

      [5] Heidi N. Becker, Tetsuo F. Miyahira, and Allan H. Johnston. Latent Damage in CMOS Devices from Single-Event Latchup // Jet Propulsion Laboratory, California Institute of Technology. Pasadena, California. 2002.

      [6] A.O. Ahmetov Features of single-board computers resistance research to influence of separate nuclear particles // Special equipment and communication. 2011. N 4-5. P. 21–24.

      [7] Tararaksin A.S., Nigmatullin R.R., Savchenkov D.V., Solovyov S.A., Yanenko A.V. Single Event Latchup and Catastrophic Failure in CMOS Devices Investigation and Prevention Methods.: Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) ISSN: 2078-7707. 2012. P. 628-633.

      [8] Frank Hall Schmidt, Jr. Fault Tolerant Design Implementation on Radiation Hardened By Design SRAM-Based FPGAs // B.S., Electrical Engineering. 2011. P. 31-36.

      [9] V.V. Konyahin, A.N. Denisov, R.A. Fedorov, A.L. Vilson, S.S. Braghnikov, V.S. Konovalov, N.I. Malashevich, A.S. Roslyakov Chips for space equipment. Practical guide, under edition A.N. Saurov – M.: Technosphere, 2016. P. 388.

      [10] Z.Wang, M. Karpovsky, A. Joshi Reliable MLC NAND Flash Memories Based on Non-Linear t-error Correcting Codes // Proceedings of International Conference on Dependable Systems and Networks. 2010

      [11] Wang, X. Error Correction Codes and Signal Processing in Flash Memory/ X. Wang, G. Dong, L. Pan, R. Zhou // Ch.3 in «Flash Memories», Prof. Igor Stievano (Ed.), ISBN: 978-953-307-272-2. 2010

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  • How to Cite

    S. Litvinenko, R., & V. Prokofiev, I. (2018). Development of the Information Storage Micromodule for Spacecrafts with LATCH-UP Effect Protection. International Journal of Engineering & Technology, 7(4.7), 184-187. https://doi.org/10.14419/ijet.v7i4.7.20540